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15 April 2003 F2-laser applications for machining optoelectronic microstructures
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Abstract
We report studies of material processing using the VUV F2 laser which, by virtue of its low threshold, high resolution 'machining' capability, may bring advantage to laser-based optoelectronic and photonic device fabrication. For example, probe beam deflection and etch rate studies of polymethylmethacrylate (PMMA) show this has a low ablation threshold, FT=20mJcm-2, and a large effective absorption coefficient, 1.6 x 105 cm-1, at 157nm, permitting high-resolution etching at modest fluence. The smooth ablated surfaces and low degree of thermal damage obtained with this laser make it well suited to machining structures such as relief gratings in PMMA. We also describe new results on producing fiber Bragg gratings with the 157nm laser. It is shown that these gratings can be written in a non-sensitized single mode fiber (Corning HI 980) with a low fluence and low total dose.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter E. Dyer, Anne-Marie Johnson, Saher M. Maswadi, and Christopher D. Walton "F2-laser applications for machining optoelectronic microstructures", Proc. SPIE 4941, Laser Micromachining for Optoelectronic Device Fabrication, (15 April 2003); https://doi.org/10.1117/12.468388
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