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15 April 2003 Controlled polarization switching in intracavity contacted VCSELs
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Proceedings Volume 4942, VCSELs and Optical Interconnects; (2003)
Event: Photonics Fabrication Europe, 2002, Bruges, Belgium
We have investigated the potential of asymmetric current injection for polarization switching in GaAs-based intra-cavity contacted vertical cavity surface emitting lasers using two sets of p- and n-contacts per device. We simulated the current paths in both symmetric and asymmetric contacted devices. A large lateral current component is present in the asymmetric case; this induces a certain anisotropy in comparison to the symmetric case, possibly able to stabilize the polarization in one direction. Intra-cavity devices are processed on a standard air-post VCSEL wafer. When using the contacts set along the [1-10] direction, the polarization was set along [110] while using the contacts along [110] the polarization switches from the direction along [110] to a direction making an angle of 25° to 90° towards [110]. This peculiar result can be explained by the fact that the used VCSEL structure is not designed for intra-cavity contacting.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luc M. Augustin, Remco C. Strijbos, Barry Smalbrugge, E.-J. Geluk, Fouad Karouta, Theo G. van de Roer, Guy Verschaffelt, Hugo Thienpont, and Kent D. Choquette "Controlled polarization switching in intracavity contacted VCSELs", Proc. SPIE 4942, VCSELs and Optical Interconnects, (15 April 2003);


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