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15 April 2003 Dual-purpose single-cavity oxide-confined VCSEL photodetector
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Proceedings Volume 4942, VCSELs and Optical Interconnects; (2003)
Event: Photonics Fabrication Europe, 2002, Bruges, Belgium
The increasing interest for high-speed, compact and low cost devices for optoelectronic applications such as bi-directional optical interconnects, optical imaging or telemetry has recently led to focus on the ability for the vertical-cavity surface-emitting lasers to be used as resonant cavity enhanced photodetectors for dual-purpose applications. Here we present results on design, fabrication and characterization of an oxide-confined 830nm top-emitting laser for self-aligned emission and photodetection. In this single-cavity GaAs-based device, submitted alternatively to forward and reverse bias, the oxide layer is not only used to obtain a single mode emission but also to enable decoupling between a small surface emission and a large surface detection. However the optical path is observed to change because of the refractive index difference between the oxidized and non-oxidized zones of the structure. This leads to a detrimental blue-shift on the wavelength of the Fabry-Perot cavity mode. In this work, we demonstrate this effect in photodetection by the means of spatially localized photocurrent and reflectance spectra measurements. These results show that the photocurrent is correctly collected in the whole device despite of the presence of an oxide layer. The results obtained on selective etching for optimisation of this dual-purpose device are presented.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charlotte Bringer, Veronique Bardinal, Chantal Fontaine, Laurent Averseng, Thierry Camps, Pascal Dubreuil, and Antonio Munoz-Yague "Dual-purpose single-cavity oxide-confined VCSEL photodetector", Proc. SPIE 4942, VCSELs and Optical Interconnects, (15 April 2003);

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