3 April 2003 Matrix-distributed ECR-PECVD for high-rate deposition of silica for applications in integrated optics
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We report on a novel high density ECR plasma deposition system based on matrix-distributed configuration specifically designed for large area applications. System is capable of depositing uniform high quality silica films with rate of up to 10 nm/s onto 300 mm wafers. Films are grown from silane and oxygen, while nitrogen is used for doping. Optical properties of the layers have been assessed by UV-visible ellipsometry while their chemical composition have been evaluated by ERDA and RBS techniques. FTIR spectroscopy was used to evaluate quality of the films for application in communications. Preliminary data show that films are perfectly stoichiometric and contain hydrogen in amount between 1 and 4 per cent, depending on experimental conditions. We have also deposited films doped with nitrogen doping and were able to control precisely refractive index of the material with simple gas flow regulation and in-situ kinetic ellipsometry measurements.
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Gregory Girard, Gregory Girard, Dmitri Danieka, Dmitri Danieka, Pavel Bulkin, Pavel Bulkin, Jean-Eric Bouree, Jean-Eric Bouree, } "Matrix-distributed ECR-PECVD for high-rate deposition of silica for applications in integrated optics", Proc. SPIE 4944, Integrated Optical Devices: Fabrication and Testing, (3 April 2003); doi: 10.1117/12.468294; https://doi.org/10.1117/12.468294


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