25 March 2003 Calibration of a 2D piezoresistive stress sensor in (100) silicon using a 4PB fixture
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Abstract
The test procedures and experimental results for calibration of a 2-D piezoresistive stress sensor using a four-point bending (4PB) fixture are reported. Focuses have been made on the (100) silicon test chip due to the fact that it is the most commonly used in the current microelectronics industry. The sensors on the (100) test chips were able to accurately measure plane stress components in a temperature compensated manner. The resistance of stress sensors was found to vary linearly with the applied stress. The piezoresistive coefficients were calculated and found to coincide with the reported values for silicon. A further study of the thermally induced stresses is also included in this paper to determine the resistance change that varies linearly with temperature.
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Zhao Wei Zhong, B. H. Sim, Xiaowu Zhang, "Calibration of a 2D piezoresistive stress sensor in (100) silicon using a 4PB fixture", Proc. SPIE 4945, MEMS/MOEMS: Advances in Photonic Communications, Sensing, Metrology, Packaging and Assembly, (25 March 2003); doi: 10.1117/12.468424; https://doi.org/10.1117/12.468424
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