11 March 2003 III-V microsystems for infrared imaging and spectroscopic applications
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Abstract
During the last years, great progress has been made in all disciplines related to the realization of III-V based Infrared detectors. As a consequence, these detectors have become mature and they have the potential to cope with the competition of II-VI or IV-VI based IR detectors. Due to the wide variety of III-V material systems, one can cover a wavelengths range from the UV to the second thermal window. Due to the improved material quality, the requirements on read-out circuitry and on the packaging of IR sensor chips become more and more important; this necessitates the user to approach the design and verification of a sensor chip from a system perspective instead of concentrating on the device physics.
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Jan P. Vermeiren, Jan P. Vermeiren, } "III-V microsystems for infrared imaging and spectroscopic applications", Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.476896; https://doi.org/10.1117/12.476896
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