11 March 2003 Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100°C
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The optimization of a 1300nm buried heterostructure(BH)InGaAsP/InP DFB laser for uncooled directly modulated 10Gbit/s operation is described. The development process as well as the key process parameters are discussed and results are presented on an optimized structure. Bandwidths in excess of 10GHz were measured at 90C chip base temperature. Clean open eye diagrams were recorded over the full temperature range, resulting in error free transmission over 40km. To our knowledge the results represent the current state of the art for uncooled BH DFB lasers operating at 1300nm.
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Paul M. Charles, Paul M. Charles, Michele Agresti, Michele Agresti, Gordon Burns, Gordon Burns, Graham M. Berry, Graham M. Berry, D. Bertone, D. Bertone, A. Davies, A. Davies, R. Y. Fang, R. Y. Fang, P. Gotta, P. Gotta, Constantine Kompocholis, Constantine Kompocholis, Gloria Magnetti, Gloria Magnetti, J. Massa, J. Massa, Giancarlo Meneghini, Giancarlo Meneghini, Roberto Paoletti, Roberto Paoletti, Giammarco Rossi, Giammarco Rossi, A. Taylor, A. Taylor, P. Valenti, P. Valenti, Marina Meliga, Marina Meliga, } "Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100°C", Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); doi: 10.1117/12.474862; https://doi.org/10.1117/12.474862

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