In situ investigation of local melting on the silicon surface under irradiation by incoherent light pulses with various durations

Tat'yana N. L'vova; Yakh'ya V. Fattakhov; Mansur F. Galyautdinov; M. V. Zakharov; Il'dus B. Khaibullin

doi:10.1117/12.516962

1 August 2003 In situ investigation of local melting on the silicon surface under irradiation by incoherent light pulses with various durations

Tat'yana N. L'vova, Yakh'ya V. Fattakhov, Mansur F. Galyautdinov, M. V. Zakharov, Il'dus B. Khaibullin

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Proceedings Volume 4948, 25th International Congress on High-Speed Photography and Photonics; (2003) https://doi.org/10.1117/12.516962
Event: 25th international Congress on High-Speed photography and Photonics, 2002, Beaune, France

Abstract

To study the main features of local melting more detail in situ investigations of mechanism of this effect were carried out at incoherent light irradiation with different pulse durations and irradiation power densities. These investigations were made using special long-focus microscope and high-speed camera. The results of in situ investigation of the density and sizes of local molten regions on the silicon surface are presented. In this work it was established that for all used light pulse durations the dependences of density of local molten regions on time has a similar character. Three stages are observed: (1) very fast increase from 0 (at the moment of local molten regions nucleation) up to the maximum value; (2) the plateau; (3) decrease due to coalescence of neighboring local molten regions. These results are provided that local molten regions are predominantly created during a relatively short time interval. It also has good agreement with the model of superheating of the semiconductor surface with respect to the equilibrium melting point during the pulse light irradiation.

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Tat'yana N. L'vova, Yakh'ya V. Fattakhov, Mansur F. Galyautdinov, M. V. Zakharov, and Il'dus B. Khaibullin "In situ investigation of local melting on the silicon surface under irradiation by incoherent light pulses with various durations", Proc. SPIE 4948, 25th International Congress on High-Speed Photography and Photonics, (1 August 2003); https://doi.org/10.1117/12.516962

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KEYWORDS

Silicon

Semiconductors

High speed cameras

Microscopes

Annealing

Crystals

Light sources

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