17 June 2003 Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon
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Proceedings Volume 4968, Solid State Lasers XII; (2003) https://doi.org/10.1117/12.478952
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States
Abstract
A thin two-side polished silicon etalon is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser. The active cavity finesse is ~ 0.1. The wavelength position and spectral purity are maintained over a wide range of laser operating fields. A p-Ge laser with such a selector may find application in chemical sensing, THz imaging, or non-destructive testing.
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Todd W. Du Bosq, Robert E. Peale, Eric W. Nelson, Andrei V. Muravjov, Chris J. Fredricksen, "Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon", Proc. SPIE 4968, Solid State Lasers XII, (17 June 2003); doi: 10.1117/12.478952; https://doi.org/10.1117/12.478952
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