19 June 2003 High-brightness highly-reliable InGaAlAs/GaAs laser bars with reduced fill factor and 60% efficiency
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Proceedings Volume 4973, High-Power Diode Laser Technology and Applications; (2003) https://doi.org/10.1117/12.478364
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States
Abstract
We have investigated high-power diode laser bars from 808 nm to 980 nm. The presentation is focussed upon the development of suitable laser bars for improved beam quality at increased output power. For better beam shaping structures with reduced fill factor of 30% were developed. They were operated in continuous wave mode at power levels of up to 60W. Moreover industrial applications require lifetimes of more than 10,000 hours. We present data yielding an extrapolated lifetime of up to 100,000 hours at 40W with 60% wall-plug efficiency at 980nm cw.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexis Schmitt, Martin Behringer, Gerhard Herrmann, Marc Philippens, Joerg Heerlein, Johann Luft, "High-brightness highly-reliable InGaAlAs/GaAs laser bars with reduced fill factor and 60% efficiency", Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); doi: 10.1117/12.478364; https://doi.org/10.1117/12.478364
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