19 June 2003 High-power diode laser bars with 19 up to 48 individually addressable emitters
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Proceedings Volume 4973, High-Power Diode Laser Technology and Applications; (2003) https://doi.org/10.1117/12.478368
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States
Abstract
The main challenge to address single emitters in a high-power diode-laser-bar is the thermal and electrical management to avoid crosstalking. Especially p-side up assembly leads to increasing thermal influence of neighbouring emitters due to the low thermal conductivity of GaAs. Electro-magnetic fields inside and outside the laser-bar, for example caused by high frequency modulation (10 MHz) at a high current (up to 1 A), induce voltages into neighbouring electric circuits, hence the output power of neighbouring emitters can be affected.
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Markus Roehner, Markus Roehner, Norbert Boenig, Norbert Boenig, Konstantin Boucke, Konstantin Boucke, Reinhart Poprawe, Reinhart Poprawe, } "High-power diode laser bars with 19 up to 48 individually addressable emitters", Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); doi: 10.1117/12.478368; https://doi.org/10.1117/12.478368
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