Paper
19 June 2003 High power single lateral mode diode lasers
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Abstract
Novel waveguide structures are presented that facilitate high power, single lateral mode output in narrow stripe semiconductor lasers. Flared tapered waveguide lasers, fabricated by a metal-organic chemical vapor deposition (MOCVD) selective area epitaxy (SAE), are shown to attain output powers of 650mW with stable single lateral mode beam properties. Novel integrated mode filters, which induce mode selective lateral radiation loss via curvature, or frustration of the index guide, are shown to increase the threshold for the 1st order mode to prevent it from attaining threshold. The addition these unique mode filters, which do not increase the fabrication complexity, extends the range of single lateral mode operation in narrow stripe devices.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reuel B. Swint, Terence S. Yeoh, Victor C. Elarde, Mark S. Zediker, and James J. Coleman "High power single lateral mode diode lasers", Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); https://doi.org/10.1117/12.482630
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Waveguides

Waveguide lasers

Laser damage threshold

Semiconductor lasers

Optical filters

High power lasers

Refractive index

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