17 October 2003 Excimer and femtosecond pulsed laser induced forward transfer process of metal thin film
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Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003) https://doi.org/10.1117/12.479249
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States
Abstract
The investigation of laser induced forward transfer (LIFT) process using femtosecond pulsed laser comparing with that using excimer laser is reported. Ni thin film of several hundreds of nanometer thickness, which is deposited on fused silica substrate, was irradiated by single pulse of KrF excimer laser (wavelength: 248 nm, pulse width: 30 ns) or femtosecond pulsed laser (wavelength: 800 nm, pulse width: 120 fs), and transferred to a Si acceptor substrate. It is shown that laser beam profile affected the removal of thin film. It is revealed that adhesion of particles was inhibited using femtosecond pulsed laser in comparison with the case of excimer LIFT process.
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Hirokazu Yamada, Hirokazu Yamada, Tomokazu Sano, Tomokazu Sano, Etsuji Ohmura, Etsuji Ohmura, Isamu Miyamoto, Isamu Miyamoto, } "Excimer and femtosecond pulsed laser induced forward transfer process of metal thin film", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479249; https://doi.org/10.1117/12.479249
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