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17 October 2003 Femtosecond laser micromachining of silicon for MEMS
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Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003)
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States
Laser micromachining of n-type silicon wafer was studied using femtosecond laser operating at 400 and 800 nm wavelengths. The fundamental wavelength was used to fabricate a diaphragm of 4 mm diameter using a computer controlled galvo head. The laser pulsewidth was 110 fs, repetition rate of 1 kHz, and maximum average power of 2 W. The experiments were done in air and in vacuum environment. The samples were examined with optical microscope and surface profilometer. Experiments were also done with doubling the laser beam frequency using LBO crystal to get 400 nm wavelength. Using a 10 nm resolution stage, high numerical aperture microscope objective, we were able to fabricate 235 nm wide lines with 600 nm depth.
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Mohammed El-Bandrawy and Mool C. Gupta "Femtosecond laser micromachining of silicon for MEMS", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003);

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