Porous nanostructured layers on germanium produced by laser optical breakdown processing

Andrei V. Kabashin; Vincent-Gabriel Pilon Marien; D.-Q. Yang; F. Magny; Michel Meunier

doi:10.1117/12.478574

17 October 2003 Porous nanostructured layers on germanium produced by laser optical breakdown processing

Andrei V. Kabashin, Vincent-Gabriel Pilon Marien, D.-Q. Yang, F. Magny, Michel Meunier

Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003) https://doi.org/10.1117/12.478574
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States

Abstract

Germanium wafer surface is modified by a technique of CO₂-laser induced air breakdown processing, which was recently introduced and used to produce photoluminescent Si-based nanostructured layers. Structural and optical properties of the Ge-based layers, formed under the irradiation spot as a result of the processing, are characterized by different techniques (SEM, XPS, FTIR, XRD, and PL). It has been found that the layers present a porous structure, containing nanoscale holes, and consist of Ge nanocrystals embedded into GeO₂ matrices. They exhibited strong photoluminescence (PL) in the green range (2.2 eV), which was attributed to defects in GeO₂ matrix due to the presence of Ge-O modes with some OH vibration in the FTIR spectra. The layers are of importance for local patterning of nanostructures on semiconductors.

Citation Download Citation

Andrei V. Kabashin, Vincent-Gabriel Pilon Marien, D.-Q. Yang, F. Magny, and Michel Meunier "Porous nanostructured layers on germanium produced by laser optical breakdown processing", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); https://doi.org/10.1117/12.478574

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