17 October 2003 Single step direct-write photomask made from bimetallic Bi/In thermal resist
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Proceedings Volume 4977, Photon Processing in Microelectronics and Photonics II; (2003) https://doi.org/10.1117/12.479415
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States
A new single step direct-write photomask process has been proposed by using Bi/In bimetallic thermal resist which turns almost transparent with high energy laser exposure. The Bi over In metallic films, each layer approximately 40 nm thick, were DC-sputtered onto quartz mask plate substrates in a single pump-down chamber. Before laser exposure the Bi/In had 2.91 Optical Density. Bi/In is a bimetallic thermal resist and hence shows near wavelength invariance exposure sensitivity from Near IR to UV light. For Bi/In exposure, up to 0.9 W Argon laser (514 nm) beam was focused by an f = 50 mm lens to a 10 micron spot. When writing a mask the Bi/In coated sample was placed on a computer-controlled high accuracy X-Y table and the pattern was raster-scanned by the laser at 10 mm/sec. After exposure the Bi/In film became nearly transparent (0.26 OD) at I-line (365 nm) wavelength, and remained conductive. Bi/In photomasks have been used together with a standard mask aligner to pattern the oxide and Al layer during the manufacturing of test solar cell devices in the lab. Experiments also showed that annealing the as-deposited films at 90°C before laser exposure increase the Bi/In transparency.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn H. Chapman, Richard Yuqiang Tu, "Single step direct-write photomask made from bimetallic Bi/In thermal resist", Proc. SPIE 4977, Photon Processing in Microelectronics and Photonics II, (17 October 2003); doi: 10.1117/12.479415; https://doi.org/10.1117/12.479415

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