15 January 2003 Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch
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Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.478245
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Abstract
A processing scheme for fabricating Pb(ZrxTi1-x)O3 thin film actuated silicon cantilevers using silicon-on-insulator wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The microswitch design specification requires the Pb(ZrxTi1-x)O3 thin film to be at least 1μm thick to achieve the adequate deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the 1μm Pb(ZrxTi1-x)O3 film. To release the Pb(ZrxTi1-x)O3 cantilevers on silicon-on-insulator wafers it is necessary to perform deep silicon etching from both sides of the wafer. The Pb(ZrxTi1-x)O3 thin film was prepared by sol-gel method. The piezoelectric coefficient d31 was calculated as 14pC/N.
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Hong Wen Jiang, Hong Wen Jiang, Paul B. Kirby, Paul B. Kirby, Qi Zhang, Qi Zhang, } "Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); doi: 10.1117/12.478245; https://doi.org/10.1117/12.478245
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