Paper
15 January 2003 Polymer protective coating for wet deep silicon etching processes
Mary Spencer, Kim Ruben, Chenghong Li, Paul Williams, Tony D. Flaim
Author Affiliations +
Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.472717
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Abstract
A need exists for spin-applied polymeric coatings to protect electronic circuitry and other sensitive structures on MEMS devices during deep silicon wet etching processes involving corrosive mixtures of aqueous acids and bases. The challenge exists in developing protective coatings that do not decompose or dissolve in the harsh etchants and, more importantly, that maintain good adhesion to the substrate during the sometimes long etching processes. We have developed a multilayer coating system that is stable and adheres well to silicon nitride and other semiconductor materials and affords chemical protection for at least eight hours in hot potassium hydroxide etchant. The same coating system is also compatible with concentrated hydrofluoric acid etchants, which can diffuse rapidly through many polymeric materials to attack the device substrate.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mary Spencer, Kim Ruben, Chenghong Li, Paul Williams, and Tony D. Flaim "Polymer protective coating for wet deep silicon etching processes", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); https://doi.org/10.1117/12.472717
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Cited by 2 scholarly publications.
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KEYWORDS
Coating

Silicon

Polymers

Etching

Semiconducting wafers

Electronic circuits

Microelectromechanical systems

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