15 January 2003 Reduction in surface roughness and aperture size effect for XeF2 etching of Si
Author Affiliations +
Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.473376
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Abstract
Low etching pressure and addition of buffer gas successfully decrease the etched surface roughness and the aperture effect which represent challenges toward the application of silicon etching with XeF2 to MEMS fabrication. Etched roughness and aperture effect are extremely high and limit factors for the design rules of MEMS. By lowering the charge pressure of XeF2 from 390 to 65 Pa, the etched roughness decreased from 870.8 and 174.4 Å and the uniformity ((depth for 25 μm mask aperture)(depth for 175 μm mask aperture)× 100 %) improved from 71.3 to 88.7%. By adding N2 or reaction products including Xe and SiF4 as buffer gas, surface roughness was reduced and the surface morphology changed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koji Sugano, Koji Sugano, Osamu Tabata, Osamu Tabata, } "Reduction in surface roughness and aperture size effect for XeF2 etching of Si", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); doi: 10.1117/12.473376; https://doi.org/10.1117/12.473376
PROCEEDINGS
8 PAGES


SHARE
Back to Top