16 January 2003 New SEM/FIB crossbeam inspection tool for high-resolution materials and device characterization
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Proceedings Volume 4980, Reliability, Testing, and Characterization of MEMS/MOEMS II; (2003) https://doi.org/10.1117/12.476340
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
High resolution investigation of the microstructure of materials and devices is very often restricted to the study of the very surface of the sample. This is because most high resolution analytical and imaging techniques like scanning electron microscopy (SEM), atomic force microscopy (AFM) or scanning tunnelling microscopy (STM) only provide information about the surface microstructure of the sample. To locally investigate the internal microstructure of the sample at high resolution, the sample has to be opened up. This can be done very precisely by the use of a focused ion beam (FIB) for cutting into the sample and the use of a field emission SEM for high resolution imaging of the internal structure. The combination of FESEM and FIB is a future key technology for semiconductor and material science related applications. A new CrossBeam tool is discussed in this presentation. Through the combination of the well known Gemini ultrahigh resolution field emission SEM column and the well known Canion31+ high performance FIB column a wide field of applications can now be accessed. This includes structural cross-sections for SEM and TEM applications, device modification, failure analysis, sublayer measurement and examination, as well as SEM and FIB related analytical techniques such as EDS, WDS, SIMS etc. Real time high resolution SEM imaging of the cutting and deposition process enables the researcher to perform very accurate three dimensional structural examinations and device modifications.
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Peter Gnauck, Peter Gnauck, Peter Hoffrogge, Peter Hoffrogge, } "New SEM/FIB crossbeam inspection tool for high-resolution materials and device characterization", Proc. SPIE 4980, Reliability, Testing, and Characterization of MEMS/MOEMS II, (16 January 2003); doi: 10.1117/12.476340; https://doi.org/10.1117/12.476340

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