Anodic oxidation-induced delamination of the SUMMiT poly 0 to silicon nitride interface

Richard A. Plass; Jeremy A. Walraven; Danelle M. Tanner; Frederick W. Sexton

doi:10.1117/12.476366

16 January 2003 Anodic oxidation-induced delamination of the SUMMiT poly 0 to Silicon Nitride Interface

Richard A. Plass, Jeremy A. Walraven, Danelle M. Tanner, Frederick W. Sexton

Author Affiliations +

Proceedings Volume 4980, Reliability, Testing, and Characterization of MEMS/MOEMS II; (2003) https://doi.org/10.1117/12.476366
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States

Abstract

Anodic oxidation can be a catastrophic failure mechanism for MEMS devices that operate in high humidity environments. Shea and coworkers have shown that positively charged polysilicon traces can fail through a progressive silicon oxidation reaction whose rate depends critically on the surface conductivity over the silicon nitride. We have found a related anodic oxidation-based failure mechanism: progressive delamination of Poly 0 electrodes from silicon nitride layers, which then mechanically interfere with device function well before the electrode is fully oxidized. To explain this effect, we propose that the silicon oxide which initially forms at the electrode edge has insufficient strength to hold the local Poly 0 / silicon nitride interface together. This low-density silicon oxide also creates a bilayer system, which curls the edge of the 300 nm thick Poly 0 electrode away from the nitride. As delamination progresses more nitride surface is exposed and more of the interface is then attacked. This process continues cyclically until the electrode edge pushes against other device components, catastrophically and irreversibly interfering with normal operation. Additionally, we observe that the delamination only starts at electrode edges directly under cantilevers, suggesting the oxidation rate also depends on the perpendicular electric field strength.

Citation Download Citation

Richard A. Plass, Richard A. Plass, Jeremy A. Walraven, Jeremy A. Walraven, Danelle M. Tanner, Danelle M. Tanner, Frederick W. Sexton, Frederick W. Sexton, } "Anodic oxidation-induced delamination of the SUMMiT poly 0 to Silicon Nitride Interface", Proc. SPIE 4980, Reliability, Testing, and Characterization of MEMS/MOEMS II, (16 January 2003); doi: 10.1117/12.476366; https://doi.org/10.1117/12.476366

ACCESS THE FULL ARTICLE

PERSONAL SIGN IN
Full access may be available with your subscription

Email or Username Forgot your username?

Password Forgot your password?

Show

Remember Email/Username on this computer

Remember Password

No SPIE account? Create an account
or Institutional Sign In via Shibboleth

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $14.40

Non-members: $18.00 ADD TO CART

Show All Keywords

Keywords/Phrases

Search In:

Publication Years