For reliable MEMS device fabrication and operation, there is a continued demand for precise characterization of materials at the micron scale. This paper presents a novel material characterization device for fatigue lifetime testing. The fatigue specimen is subjected to multi-axial loading, which is typical of most MEMS devices. Polycrystalline silicon (polysilicon) fatigue devices were fabricated using the MUMPS process with a three layer mask process ground plane, anchor, and structural layer of polysilicon. A fatigue device consists of two or three beams, attached to a rotating ring and anchored to the substrate on each end. In order to generate a sufficiently large stress, the fatigue devices were tested in resonance to produce a von Mises equivalent stress as high as 1 GPa, which is in the fracture strength range reported for polysilicon. A further increase of the stress in the beam specimens was obtained by introducing a notch with a focused ion beam. The notch resulted into a stress concentration factor of about 3.8, thereby producing maximum von Mises equivalent stress in the range of 1 through 4 GPa. This study provides insight into multi-axial fatigue testing under typical MEMS conditions and additional information about micron-scale polysilicon mechanical behavior, which is the current basic building material for MEMS devices.