16 January 2003 New getter configuration at wafer level for assuring long term stability of MEMs
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Proceedings Volume 4980, Reliability, Testing, and Characterization of MEMS/MOEMS II; (2003) https://doi.org/10.1117/12.472718
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States
Abstract
The evolution from ceramic packages to wafer to wafer hermetic sealing poses tremendous technical challenges to integrate a proper getter inside the MEMs to assure a long term stability and reliability of the devices. The state of the art solution to integrate a getter inside the MEMs of the last generation consists in patterning the getter material with a specific geometry onto the Si cap wafer. The practical implementation of this solution consists in a 4” or 6” Si wafers with grooves or particular incisures, where the getter material is placed in form of a thick film. The typical thickness of these thick films is in the range of few microns, depending on the gas load to be handled during the lifetime of the device. The structure of the thick getter film is highly porous in order to improve sorption performances, but at the same time there are no loose particles thanks to a proprietary manufacturing method. The getter thick film is composed of a Zr special alloy with a proper composition to optimize the sorption performances. The getter thick film can be placed selectively into grooves without affecting the lateral regions, surrounding the grooves where the hermetic sealing is performed.
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Marco Moraja, Marco Moraja, Marco Amiotti, Marco Amiotti, Richard C. Kullberg, Richard C. Kullberg, "New getter configuration at wafer level for assuring long term stability of MEMs", Proc. SPIE 4980, Reliability, Testing, and Characterization of MEMS/MOEMS II, (16 January 2003); doi: 10.1117/12.472718; https://doi.org/10.1117/12.472718
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