Paper
16 January 2003 Band-stop magnetostatic wave resonators
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Abstract
Two band-stop SERs (resonator A and resonator B) on silicon membrane were obtained and characterized. The frequency tunability domain of these resonators was between 3 GHz and 9.5 GHz ca. obtained by changing the dc magnetic bias field between Happl = 0.02 T and Happl = 0.34 T. The measurements of the S21 parameter demonstrate a suppression of more than 20 dB of the high order modes, showing a good selectivity of this kind of resonator. The rejection ratio was better than -20 dB in the frequency domain from f = 3 GHz to f = 9.5 GHz for the resonator A and better than -20 dB between f = 4.2 GHz and f = 9.5 GHz for the resonator B. These results demonstrate the possibility to obtain microwave band-stop resonators supported on silicon membrane with high isolation and rejection ratios.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Romolo Marcelli, George Sajin, Florea Craciunoiu, and Alina Cismaru "Band-stop magnetostatic wave resonators", Proc. SPIE 4981, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, (16 January 2003); https://doi.org/10.1117/12.473375
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Cited by 1 scholarly publication.
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KEYWORDS
Resonators

Silicon

Magnetism

Microwave radiation

Semiconducting wafers

Etching

Oscillators

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