As CDs continue to shrink, lithographers are moving towards using off-axis illumination while continuing to decrease the operating wavelength to improve their CD budget. Currently DUV lithography at 248nm and 193nm are driving the ability of the foundries and IDM’s to meet or exceed the SIA roadmap for semiconductor chip performance. In time, however, the industry will migrate to the even shorter wavelengths of 157nm and 13nm. To meet today’s needs with 248nm and 193nm requires the use of Resolution Enhancement Techniques such as Optical Proximity Correction, Phase Shift Mask, and Off Axis Illumination. The need for these techniques will be only slightly reduced as the industry migrates to 157nm in several years. Off-axis illumination (the topic of this paper) has been shown to significantly increase the lithographic process window and there have been several papers over the last few years describing various illumination profiles designed for application specific optimization. These include various annular and quadrupole illumination schemes including weak quadrupole, CQUEST, and Quasar Diffractive optics, if incorporated into the design of the illumination system, can be used to create arbitrary illumination profiles without the associated light loss, thus maintaining throughput while optimizing system performance. We report on the design and fabrication of such devices for use with KrF, ArF, and F2 scanners.