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25 July 2003 Beam filamentation and maximum optical power in high-brightness tapered lasers
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474375
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
In this work we use a numerical model to analyze the beam filamentation in tapered lasers with the goal of optimizing the epitaxial structure. The model self-consistently solves the steady state electrical and optical equations for the flared unstable resonator. This model has been applied to simulate the performance of InGaAs/InGaAsP tapered lasers emitting at 975 nm. We investigate the role of the active material properties (carrier induced index change, differential gain) and of the epitaxial design (optical confinement factor) on the filamentation process and on the maximum achievable power.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luis Borruel, Slawomir Sujecki, Daniel Rodriguez, Jim Wykes, Michel M. Krakowski, Pablo Moreno, Phillip Sewell, Trevor Mark Benson, Eric C. Larkins, and Ignacio Esquivias "Beam filamentation and maximum optical power in high-brightness tapered lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474375
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