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25 July 2003 Computational electronics of wide-bandgap semiconductors
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003)
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
In this paper some relevant aspects of the computational electronics of wide band gap semiconductors are discussed. The most important modelling differences and challenges that make wide band gap semiconductors more complex to study than conventional cubic materials are considered. The model used to compute the bulk transport properties of wurtzite phase GaN is presented as an example. In particular, the negative differential mobility effect and the velocity overshoot are discussed. It is found that the negative differential mobility results from a two-step process. The non-parabolicity of the Γ valley is responsible for the onset of the negative differential mobility phenomena and the transfer to higher energy region of the Brillouin zone makes a contributions only after the process has already initiated.
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Enrico Bellotti "Computational electronics of wide-bandgap semiconductors", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003);

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