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25 July 2003 Device model for three-terminal lateral p-n junction quantum well lasers
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.473056
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
We present a device model for a lateral p-n junction quantum-well edge-emitting laser-transistor with an extra gate contact. Such a contact provides an opportunity to control the confinement conditions of the electrons injected into the active region and, as a consequence, the threshold current and output optical power by the gate voltage. Using the proposed model, we calculate the laser dc characteristics and estimate its modulation performance. We show that the application of negative gate voltages can lead to a substantial decrease in the threshold current. The estimated cutoff modulation frequency associated with the gate recharging can be much higher than those associated with the photon and electron lifetimes.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Victor Ryzhii, Akira Satou, Irina Khmyrova, Tetsuhiko Ikegami, Pablo Oscar Vaccaro, Kazuyoshi Kubota, Jose M. Zanardi Ocampo, and Tahito Aida "Device model for three-terminal lateral p-n junction quantum well lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.473056
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