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25 July 2003 Electrical-thermal-optical simulation of GaAs/AlGaAs oxide-confined VCSELs
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.482324
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
A three-dimensional electrical-thermal-optical numerical solver is applied to model top-emitting oxide-confined vertical-cavity surface-emitting lasers (VCSELs) with GaAs/AlGaAs multiple-quantum-well active region. CW mode of operation is simulated over a range of voltages, covering sub-threshold spontaneous emission and lasing emission. Effect of self-distribution of electrical current is demonstrated for the first time in a self-consistent electrical-thermal-optical simulation of VCSELs.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Smagley, Min Lu, Gennady A. Smolyakov, Petr Georgievich Eliseev, Marek Osinski, Brian P. Riely, Hongen Shen, and George J. Simonis "Electrical-thermal-optical simulation of GaAs/AlGaAs oxide-confined VCSELs", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.482324
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