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25 July 2003 Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.480855
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Finite difference analysis was used to determine the thermal characteristics of continuous wave (CW) 850 nm AlGaAs/GaAs implant-apertured vertical-cavity surface-emitting lasers. A novel flip-chip design was used to enhance the heat dissipation. The temperature rise in the active region can be maintained below 40 °C at 4 mW output power with 10 mA current bias. In contrast, the temperature rise reaches above 60 °C without flip-chip bonding. The transient-temperature during turn-on of a VCSEL was also investigated. The time needed for the device to reach the steady-state temperature was in the range of a few tenths of a milli-second, which is orders of magnitude larger than the electrical or optical switch time. Flip-chip bonding will reduce the shift of the wavelength, peak power, threshold current and slope efficiency during VCSEL operations.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rishabh Mehandru, Gerard Dang, Kelly Pui-Sze Ip, Suku Kim, Fan Ren, Stephen J. Pearton, William S. Hobson, John Lopata, Wayne H. Chang, and H. Shen "Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.480855
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