25 July 2003 Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display
Author Affiliations +
Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.483614
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
A new candidate for the lattice-matched metallic substrate, i.e. ZrB2, for the growth of group-III nitrides is proposed. A low-temperature-deposited-buffer layer is found to be essential for the growth of GaN on ZrB2. Highly luminescent violet-light-emitting diodes fabricated on ZrB2 perform as well as or even superior to those fabricated on sapphire. ZrB2 is easily etched by the solution of HF and HNO3. Fabrication of a nitride-based flexible display is expected using a thin free-standing GaN film.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Amano, Hiroshi Amano, Motoaki Iwaya, Motoaki Iwaya, Shugo Nitta, Shugo Nitta, Y. Tomida, Y. Tomida, K. Iida, K. Iida, T. Kawashima, T. Kawashima, S. Fukui, S. Fukui, Satoshi Kamiyama, Satoshi Kamiyama, Isamu Akasaki, Isamu Akasaki, H. Kinoshita, H. Kinoshita, T. Matsuda, T. Matsuda, S. Otani, S. Otani, } "Growth and fabrication of nitride-based LED on metallic substrate for application to high-power device and flexible display", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.483614; https://doi.org/10.1117/12.483614
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT


Back to Top