Paper
25 July 2003 Microscopic modeling of intersubband optical processes in Type II semiconductor quantum wells: linear absorption
Author Affiliations +
Abstract
Intersubband absorption spectra are analyzed using the density matrix theory under the second Born approximation. The intersubband semiconductor Bloch equations are derived from the first principles including electron-electron and electron-longitudinal optical phonon interactions, whereas electron-interface roughness scattering is considered using Ando's theory. A spurious-states-free 8-band k•p Hamiltonian is used, in conjunction with the envelope function approximation to calculate the electronic band structure self-consistently for type II InAs/AlSb multiple quantum well structures. We demonstrate the interplay of various physical processes in the absorption spectra in the mid-infrared frequency range.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jianzhong Li, Konstantin I. Kolokolov, and Cun-Zheng Ning "Microscopic modeling of intersubband optical processes in Type II semiconductor quantum wells: linear absorption", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474398
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Quantum wells

Absorption

Polarization

Semiconductors

Particles

Scattering

Phonons

Back to Top