25 July 2003 Microscopic modeling of intersubband optical processes in Type II semiconductor quantum wells: linear absorption
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474398
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Intersubband absorption spectra are analyzed using the density matrix theory under the second Born approximation. The intersubband semiconductor Bloch equations are derived from the first principles including electron-electron and electron-longitudinal optical phonon interactions, whereas electron-interface roughness scattering is considered using Ando's theory. A spurious-states-free 8-band k•p Hamiltonian is used, in conjunction with the envelope function approximation to calculate the electronic band structure self-consistently for type II InAs/AlSb multiple quantum well structures. We demonstrate the interplay of various physical processes in the absorption spectra in the mid-infrared frequency range.
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Jianzhong Li, Jianzhong Li, Konstantin I. Kolokolov, Konstantin I. Kolokolov, Cun-Zheng Ning, Cun-Zheng Ning, } "Microscopic modeling of intersubband optical processes in Type II semiconductor quantum wells: linear absorption", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474398; https://doi.org/10.1117/12.474398
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