Multiphysics modeling of intracavity-contacted VCSELs

Brian P. Riely; J. Jiang Liu; Hongen Shen; Gerard Dang; Wayne H. Chang; Y. Jiang; Z. Sikorski; T. Czyszanowski; Andrzej J. Przekwas

doi:10.1117/12.482321

25 July 2003 Multiphysics modeling of intracavity-contacted VCSELs

Brian P. Riely, J. Jiang Liu, Hongen Shen, Gerard Dang, Wayne H. Chang, Y. Jiang, Z. Sikorski, T. Czyszanowski, Andrzej J. Przekwas

Author Affiliations +

Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.482321
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

The design of the next generation of vertical-cavity surface-emitting lasers (VCSELs) will greatly depend on the availability of accurate modeling tools. Comprehensive models of semiconductor lasers are needed to predict realistic behavior of various laser devices, such as the spatially nonuniform gain that results from current crowding. Advanced physics models for VCSELs require benchmark quality experimental data for model validation. This paper presents preliminary results of a collaborative effort at ARL to fabricate and experimentally characterize test optoelectronic structures and VCSEL devices, and at CFDRC to develop comprehensive multiphysics modeling, design and optimization tools for semiconductor lasers and photodetectors. Experimental characterization procedure and measurements of optical and electrical data for oxide-confined intracavity VCSELs are presented. A comprehensive multiphysics modeling tools CFD-ACE+ O’SEMI has been developed. The modeling tool integrates electronic, optical, thermal, and material gain data models for the design of VCSELs and edge emitting lasers (EELs). This paper presents multidimensional simulation analysis of current crowding in oxide-confined intracavity VCSELs. Computational results helped design the test structures and devices and are used as a guide for experimental measurements performed at ARL.

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Brian P. Riely, J. Jiang Liu, Hongen Shen, Gerard Dang, Wayne H. Chang, Y. Jiang, Z. Sikorski, T. Czyszanowski, and Andrzej J. Przekwas "Multiphysics modeling of intracavity-contacted VCSELs", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.482321

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