25 July 2003 Multishell photoluminescence from InAs/InGaAs quantum dots
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.482322
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Photoluminescence spectra are investigated of InAs/InGaAs QD structures prepared be MBE on GaAs substrates in a range of pumping power density up to 0.6 kW/cm2. Multiple spectra band are observed corresponding to electron shells in atom-like dots. Identification of shells is proposed on the basis of spherical oscillator model. Energy diagram of dots is proposed taking into account identical temperature dependence of PL intensity in three lowest spectral bands.
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Petr Georgievich Eliseev, Petr Georgievich Eliseev, Kevin J. Malloy, Kevin J. Malloy, Andreas Stintz, Andreas Stintz, T. V. Torchynska, T. V. Torchynska, H. M. Alfaro Lopez, H. M. Alfaro Lopez, R. Pena Sierra, R. Pena Sierra, } "Multishell photoluminescence from InAs/InGaAs quantum dots", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.482322; https://doi.org/10.1117/12.482322

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