25 July 2003 Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells
Author Affiliations +
Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474385
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Novel bi-directional propagation is observed in a shallow-etched bending ridge waveguide. The lasing light propagates in two different paths, straight way and bending way. The far-field pattern is quite different before and after the lasing condition is reached. Emission spectra of light emitted from two facets are also different. This is because the bidirectional guided effect of lasing mode occurs.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Di-Ku Yu, Di-Ku Yu, Gagik Sh. Shmavonyan, Gagik Sh. Shmavonyan, Yi-Shin Su, Yi-Shin Su, Ching-Fuh Lin, Ching-Fuh Lin, } "Peculiarities of emission characteristics of semiconductor optical amplifier with multiple quantum wells", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474385; https://doi.org/10.1117/12.474385
PROCEEDINGS
8 PAGES


SHARE
Back to Top