Photonic crystal based amorphous silicon microcavity

Ali Serpenguezel

doi:10.1117/12.474378

25 July 2003 Photonic crystal based amorphous silicon microcavity

Ali Serpenguezel

Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474378
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

In this research, properties of bulk and microcavity hydrogenated amorphous silicon nitride are studied. Microcavities were realized by embedding the active hydrogenated amorphous silicon layer between two dielectric mirrors. The dielectric mirrors were realized with two distributed Bragg reflectors (DBR’s). The DBR’s are one dimensional photonic bandgap (PBG) materials, i.e., photonic crystals, composed of alternating layers of silicon oxide and silicon nitride. All of the layers are grown by plasma enhanced chemical vapor deposition (PECVD) on silicon substrates. The temperature dependence of the amorphous silicon photoluminescence is performed to fully characterize and optimize the material in the pursuit of obtaining novel photonic microdevices. Photonics device characterization was done by means of atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence, and reflectance measurements. The reflectance spectra calculations were performed using the transfer matrix method (TMM).

Citation Download Citation

Ali Serpenguezel "Photonic crystal based amorphous silicon microcavity", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474378

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