25 July 2003 Recent advances in long-wavelength GaAs-based quantum dot lasers
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474390
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
1.3 μm GaAs-based quantum dot (QD) lasers demonstrate parameters improved over InP-based devices. They exhibit lower threshold current densities and losses, higher differential efficiencies and improved temerature stability. Highspeed operation is demonstrated. Reduced linewidth enhancement factor advantageous for low-chirp operation makes it possible to suppress dramatically filamentation effects destroying lateral far-field pattern. GaAs-based QD 1.3 μm VCSEL with 8 μm oxide aperture wavelength emits up to 1.2 mW CW multimode.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai N. Ledentsov, Nikolai N. Ledentsov, Dieter Bimberg, Dieter Bimberg, Roman Sellin, Roman Sellin, C. Ribbat, C. Ribbat, Victor M. Ustinov, Victor M. Ustinov, Alexey E. Zhukov, Alexey E. Zhukov, Alexey R. Kovsh, Alexey R. Kovsh, Mikhail V. Maximov, Mikhail V. Maximov, Yuri M. Shernyakov, Yuri M. Shernyakov, } "Recent advances in long-wavelength GaAs-based quantum dot lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474390; https://doi.org/10.1117/12.474390


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