25 July 2003 Recent advances in long-wavelength GaAs-based quantum dot lasers
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474390
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
1.3 μm GaAs-based quantum dot (QD) lasers demonstrate parameters improved over InP-based devices. They exhibit lower threshold current densities and losses, higher differential efficiencies and improved temerature stability. Highspeed operation is demonstrated. Reduced linewidth enhancement factor advantageous for low-chirp operation makes it possible to suppress dramatically filamentation effects destroying lateral far-field pattern. GaAs-based QD 1.3 μm VCSEL with 8 μm oxide aperture wavelength emits up to 1.2 mW CW multimode.
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Nikolai N. Ledentsov, Dieter Bimberg, Roman Sellin, C. Ribbat, Victor M. Ustinov, Alexey E. Zhukov, Alexey R. Kovsh, Mikhail V. Maximov, Yuri M. Shernyakov, "Recent advances in long-wavelength GaAs-based quantum dot lasers", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.474390; https://doi.org/10.1117/12.474390
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