25 July 2003 Recombination mechanism in low-dimensional nitride semiconductors
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.480854
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa1-xN-based quantum structures.
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Yoichi Kawakami, Akio Kaneta, Koichi Okamoto, Tsutomu Inoue, Fuminori Satou, Yoshihito Narita, Fritz Henneberger, Giichi Marutsuki, Yukio Narukawa, Takashi Mukai, Shigeo Fujita, "Recombination mechanism in low-dimensional nitride semiconductors", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.480854; https://doi.org/10.1117/12.480854
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