25 July 2003 Recombination mechanism in low-dimensional nitride semiconductors
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.480854
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Scanning near field optical microscopy (SNOM) has been developed to assess the recombination mechanism in low-dimensional nitride semiconductors by employing spatial and temporal photoluminescence (PL) mapping under illumination-collection at cryogenic temperatures. The near-field PL images taken at an InxGa1-xN single-quantum-well (SQW) structure revealed the variation of both intensity and peak energy according to the probing location with the scale less than a few tens of a nanometer. The PL, the linewidth of which was about 60meV in macroscopic measurements, was separated into several peaks with the linewidth of about 12 meV if the SNOM-PL was taken with the aperture size of 30 nm. Clear spatial correlation was observed between PL intensity and PL peak-photon-energy, where the regions of strong PL intensity correspond to those of low PL peak-photon-energy. Time-resolved SNOM-PL study showed the important role of exciton/carrier localization in the recombination mechanism in InxGa1-xN-based quantum structures.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoichi Kawakami, Yoichi Kawakami, Akio Kaneta, Akio Kaneta, Koichi Okamoto, Koichi Okamoto, Tsutomu Inoue, Tsutomu Inoue, Fuminori Satou, Fuminori Satou, Yoshihito Narita, Yoshihito Narita, Fritz Henneberger, Fritz Henneberger, Giichi Marutsuki, Giichi Marutsuki, Yukio Narukawa, Yukio Narukawa, Takashi Mukai, Takashi Mukai, Shigeo Fujita, Shigeo Fujita, } "Recombination mechanism in low-dimensional nitride semiconductors", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); doi: 10.1117/12.480854; https://doi.org/10.1117/12.480854

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