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25 July 2003 VCSEL's computer simulation by the nontraditional method of single expression
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Proceedings Volume 4986, Physics and Simulation of Optoelectronic Devices XI; (2003) https://doi.org/10.1117/12.474319
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
An advanced non-traditional method of single expression (MSE) is applied to simulate optical functionality of 1D VCSEL type structures. In the MSE Helmholtz’s equation solution is presented in the generalized form of a single expression, contrary to the widely accepted counter-propagating waves presentation. Main principles of the MSE are briefly described. VCSEL type structure consisting of two stacks of distributed Bragg reflectors (DBRs) and a single dielectric layer between them is considered. DBRs are presented as quarter-wavelength dielectric bilayers of alternating high and low indices. Spectral dependences of VCSEL type structure when amplification is absent and included in a single dielectric layer are obtained versus the normalized thickness of a single dielectric layer. Spatial distributions of electric field amplitude, real part of permittivity and power flow density along the structure are presented for minimal and maximal transmission of the structure. By attaining gain some specific value the lasing state of VCSEL type structure is observed.
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Hovik V. Baghdasaryan, Tamara M. Knyazyan, Sergey G. Dashyan, and Albert A. Mankulov "VCSEL's computer simulation by the nontraditional method of single expression", Proc. SPIE 4986, Physics and Simulation of Optoelectronic Devices XI, (25 July 2003); https://doi.org/10.1117/12.474319
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