17 June 2003 Integrated photodiodes in standard BiCMOS technology
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Proceedings Volume 4989, Optical Devices for Fiber Communication IV; (2003); doi: 10.1117/12.474798
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Photodiode structures were integrated in a low cost 0.5 μm silicon BiCMOS process using standard process flow without any technology modification. Rise times of 1.3ns and 1.4ns were measured for wavelengths λ of 660nm and 780nm with a responsivity of 0.23 A/W and 0.14 A/W, respectively. Photodiodes with a high responsivity of 0.42 A/W are reaching a risetime of 4ns for λ = 780nm. Comparable low values for the risetime at 780nm are reported in the literature for integrated photodiodes in standard silicon technologies only with a modification of the epitaxial substrate material. So this photodiodes are suitable for a wide variety of low-cost high-speed optical sensor applications, for optical fiber communication and fiber in home applications.
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Johannes Sturm, Simon Hainz, Gernot Langguth, Horst Zimmermann, "Integrated photodiodes in standard BiCMOS technology", Proc. SPIE 4989, Optical Devices for Fiber Communication IV, (17 June 2003); doi: 10.1117/12.474798; https://doi.org/10.1117/12.474798
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KEYWORDS
Photodiodes

Laser phosphor displays

Diffusion

Silicon

Standards development

Photonic integrated circuits

Doping

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