17 June 2003 Active Er3+ doped lead-niobium-germanate planar waveguides produced by pulsed laser deposition
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Proceedings Volume 4990, Rare-Earth-Doped Materials and Devices VII; (2003) https://doi.org/10.1117/12.473585
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
In this work, pulsed laser deposition has been used to produce Er3+ doped lead-niobium-germanate thin films from Er3+ doped 50Geo2-25PbO-25Nb2O5 transparent glasses with an Er2O3 content in the 0.5-3 weight % range. In all cases, by pumping the 4I11/2 level of Er3+, the as deposited films are optically active showing at room temperature the 4I13/2 4I15/2 emission centered around 1530 nm. The luminescence intensity increases as the Er3+ content in the targets increases, whereas the opposite behavior is observed for the luminescence lifetime. The emission intensity and lifetimes of the 1.5 μm emission increase upon annealing.
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Rolindes Balda, Oscar Sanz, Jose A. Gonzalo, Miguel Jimenez de Castro, Angel Perea, Jose M. Fernandez-Navarro, Carmen N. Afonso, Joaquin R. Fernandez, "Active Er3+ doped lead-niobium-germanate planar waveguides produced by pulsed laser deposition", Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); doi: 10.1117/12.473585; https://doi.org/10.1117/12.473585
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