17 June 2003 Active Er3+ doped lead-niobium-germanate planar waveguides produced by pulsed laser deposition
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Proceedings Volume 4990, Rare-Earth-Doped Materials and Devices VII; (2003) https://doi.org/10.1117/12.473585
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
In this work, pulsed laser deposition has been used to produce Er3+ doped lead-niobium-germanate thin films from Er3+ doped 50Geo2-25PbO-25Nb2O5 transparent glasses with an Er2O3 content in the 0.5-3 weight % range. In all cases, by pumping the 4I11/2 level of Er3+, the as deposited films are optically active showing at room temperature the 4I13/2 4I15/2 emission centered around 1530 nm. The luminescence intensity increases as the Er3+ content in the targets increases, whereas the opposite behavior is observed for the luminescence lifetime. The emission intensity and lifetimes of the 1.5 μm emission increase upon annealing.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rolindes Balda, Rolindes Balda, Oscar Sanz, Oscar Sanz, Jose A. Gonzalo, Jose A. Gonzalo, Miguel Jimenez de Castro, Miguel Jimenez de Castro, Angel Perea, Angel Perea, Jose M. Fernandez-Navarro, Jose M. Fernandez-Navarro, Carmen N. Afonso, Carmen N. Afonso, Joaquin R. Fernandez, Joaquin R. Fernandez, } "Active Er3+ doped lead-niobium-germanate planar waveguides produced by pulsed laser deposition", Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); doi: 10.1117/12.473585; https://doi.org/10.1117/12.473585
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