Translator Disclaimer
17 June 2003 Photoluminescence of Er complexed sol-gel hybrid materials by indirect excitation
Author Affiliations +
Proceedings Volume 4990, Rare-Earth-Doped Materials and Devices VII; (2003) https://doi.org/10.1117/12.474760
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
We prepared a sol-gel hybrid material which has low loss near 1.5 μm wavelength using methyltriethoxysilane, vinyltriethoxysilane, and phenyltrimethoxysilane as precursors. Several erbium precursors were used in order to incorporate into the hybrid matrix. Among several Er-doped system, the sol-gel hybrid films doped with ErQ showed a clear photoluminescence at 1.5μm when they were pumped by 477nm light, not a resonant wavelength of Er3+ ions, which is expected to absorb the pump energy and transfer to adjacent Er3+ ions. Indirect excitation mechanism was investigated by photoluminescence excitation measurement using various wavelengths of Ar+ laser. The sol-gel hybrid films doped with ErQ show an efficient indirect excitation of Er3+ luminescence through ligand sensitization.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Oun-Ho Park, Se-Young Seo, and Byeong-Soo Bae "Photoluminescence of Er complexed sol-gel hybrid materials by indirect excitation", Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); https://doi.org/10.1117/12.474760
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
Back to Top