Sol-gel erbium-doped silica-hafnia planar and channel waveguides

Rogeria Rocha Goncalves; Giovanni Carturan; Luca Zampedri; Maurizio Ferrari; Cristina Armellini; Alessandro Chiasera; M. Mattarelli; Enrico Moser; Maurizio Montagna; Giancarlo C. Righini; Stefano Pelli; Gualtiero Nunzi Conti; Sidney J. L. Ribeiro; Younes Messaddeq; Antonio Minotti; Vittorio Foglietti; Herve Portales

doi:10.1117/12.478340

17 June 2003 Sol-gel erbium-doped silica-hafnia planar and channel waveguides

Rogeria Rocha Goncalves, Giovanni Carturan, Luca Zampedri, Maurizio Ferrari, Cristina Armellini, Alessandro Chiasera, M. Mattarelli, Enrico Moser, Maurizio Montagna, Giancarlo C. Righini, Stefano Pelli, Gualtiero Nunzi Conti, Sidney J. L. Ribeiro, Younes Messaddeq, Antonio Minotti, Vittorio Foglietti, Herve Portales

Author Affiliations +

Proceedings Volume 4990, Rare-Earth-Doped Materials and Devices VII; (2003) https://doi.org/10.1117/12.478340
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

Erbium activated SiO₂-HfO₂ planar waveguides, doped with Er³⁺ concentrations ranging from 0.01 to 4 mol%, were prepared by sol-gel method. The films were deposited on v-SiO₂ and silica-on-silicon substrates using dip-coating technique. The waveguides show high densification degree, effective intermingling of the two film components, and uniform surface morphology. The waveguide deposited on silica-on-silicon substrates shows one single propagation mode at 1.5μm, with a confinement coefficient of 0.81 and an attenuation coefficient of 0.8 dB/cm at 632.8nm. Emission in the C-telecommunication band was observed at room temperature for all the samples upon continuous-wave excitation at 980 nm or 514.5 nm. The shape of the emission band corresponding to the ⁴I_13/2→⁴I_15/2 transition is found to be almost independent both on erbium content and excitation wavelength, with a FWHM between 44 and 48 nm. The ⁴I_13/2 level decay curves presented a single-exponential profile, with a lifetime ranging between 1.1-6.6 ms, depending on the erbium concentration. Infrared to visible upconversion luminescence upon continuous-wave excitation at 980 nm was observed for all the samples. Channel waveguide in rib configuration was obtained by etching the active film in order to have a well confined mode at 1.5 μm.

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Rogeria Rocha Goncalves, Giovanni Carturan, Luca Zampedri, Maurizio Ferrari, Cristina Armellini, Alessandro Chiasera, M. Mattarelli, Enrico Moser, Maurizio Montagna, Giancarlo C. Righini, Stefano Pelli, Gualtiero Nunzi Conti, Sidney J. L. Ribeiro, Younes Messaddeq, Antonio Minotti, Vittorio Foglietti, and Herve Portales "Sol-gel erbium-doped silica-hafnia planar and channel waveguides", Proc. SPIE 4990, Rare-Earth-Doped Materials and Devices VII, (17 June 2003); https://doi.org/10.1117/12.478340

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