30 May 2003 Dynamical carrier transport and terahertz gain in semiconductor superlattices
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Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.475701
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
We have investigated terahertz (THz) emission due to dynamical electron transport in wide miniband GaAs/Al0.2Ga0.7As superlattices. By noting that the time-domain THZ emission spectroscopy inherently measures the step-response of the electron system to the bias electric filed, the obtained THz spectra were compared with the high-frequency conductivities predicted for miniband transport. Excellent agreement between theory and experiment strongly supports that the THz gain due to Bloch oscillating electrons persists at least up to 1.7 THz. It was also found that Zener tunneling into the second miniband sets the high-frequency limit of the THz gain for the samples studied here.
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Kazuhiko Hirakawa, Kazuhiko Hirakawa, Yozo Shimada, Yozo Shimada, M. Odnoblioudov, M. Odnoblioudov, K. A. Chao, K. A. Chao, "Dynamical carrier transport and terahertz gain in semiconductor superlattices", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.475701; https://doi.org/10.1117/12.475701
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