30 May 2003 Large electric-filed induced electron drift velocity observed in InxGal-xAs-based p-i-n semiconductor nanostructures
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Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.479506
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Transient subpicosecond Raman spectroscopy has been used to interrogate electron transport properties in InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be much larger than either GaAs or InP-based p-i-n nanostructures at comparable field. We attribute this to both the much smaller electron effective mass and the much larger Γ to X (L) energy separations in InxGa1-xxAs-based semiconductor nanostructures.
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W. Liang, W. Liang, Kong-Thon F. Tsen, Kong-Thon F. Tsen, Meng-Chyi Wu, Meng-Chyi Wu, Chong-Long Ho, Chong-Long Ho, Wen-Jeng Ho, Wen-Jeng Ho, } "Large electric-filed induced electron drift velocity observed in InxGal-xAs-based p-i-n semiconductor nanostructures", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.479506; https://doi.org/10.1117/12.479506
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