Realization of ultrafast and low-power all-optical switches using intersubband transitions in a novel InGaAs/AlAs/AlAsSb quantum well structure

Teruo Mozume; Jun-ichi Kasai; Nikolai Georgiev; Takasi Simoyama; Achanta Venu Gopal; Haruhiko Yoshida

doi:10.1117/12.475706

30 May 2003 Realization of ultrafast and low power all-optical switches using intersubband transitions in a novel InGaAs/AlAs/AlAsSb quantum well structure

Teruo Mozume, Jun-ichi Kasai, Nikolai Georgiev, Takasi Simoyama, Achanta Venu Gopal, Haruhiko Yoshida

Author Affiliations +

Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.475706
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States

Abstract

We have dramatically improved the optical properties of extremely thin QWs required for ISBT devices operating at optical communication wavelengths using novel InGaAs/AlAs/AlAsSb QW structures with 4-7 monolayers (MLs) of AlAs. The intersubband saturation intensity (Is) was reduced to 3fj/μm². This represented an I_s reduction of nearly 3 orders of magnitude relative to the previous samples whether or not such sample featured 1 ML of AlAs interface layer. This paper reviews the recent results of novel InGaAs/AlAs/AlAsSb quantum well properties grown by molecular beam epitaxy, and discusses the linear and nonlinear optical responses of ISBT.

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Teruo Mozume, Jun-ichi Kasai, Nikolai Georgiev, Takasi Simoyama, Achanta Venu Gopal, and Haruhiko Yoshida "Realization of ultrafast and low power all-optical switches using intersubband transitions in a novel InGaAs/AlAs/AlAsSb quantum well structure", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); https://doi.org/10.1117/12.475706

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