30 May 2003 Scattering processes and dynamics of exciton-biexciton system in GaN
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Proceedings Volume 4992, Ultrafast Phenomena in Semiconductors VII; (2003) https://doi.org/10.1117/12.475699
Event: Integrated Optoelectronics Devices, 2003, San Jose, CA, United States
Abstract
Bound and unbound biexcitons in a free-standing bulk GaN are investigated by time-integrated and spectrally-resolved four-wave mixing measurements, where the formation of hetero-biexcitons that consist of A and B excitons (XXAB) as well as A-biexcitons (XXAA) and their unbound biexciton (XX*AA) are clearly observed. The FWM spectra and delay-time dependence are explained qualitatively and the interaction between A- and B-excitons gives rise to the phase shifts of the quantum beating and the energy shifts of the spectra, which is considered as the effect of the unbound state of XXAB (i.e. XX*AB). The unbound A-biexciton (XX*AA). Is also observed clearly in spectral and temporal domain and is found to play an important role in FWM signals for all polarizations.
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Satoru Adachi, Kouji Hazu, Takayuki Sota, Shigefusa F. Chichibu, Takashi Mukai, Shunichi Muto, Katsuo Suzuki, "Scattering processes and dynamics of exciton-biexciton system in GaN", Proc. SPIE 4992, Ultrafast Phenomena in Semiconductors VII, (30 May 2003); doi: 10.1117/12.475699; https://doi.org/10.1117/12.475699
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